Renesas Electronics: Low On-State Resistance Power MOSFETs for more power efficient and compact server power supplies

15 FEBRUARY 2013

Renesas Electronics announced three new low on-state resistance MOSFET products, including the μPA2766T1A, optimized for use as ORing FETs in power supply units for network servers and storage systems.
Featuring the industry’s lowest on-state resistance of 0.72mΩ (typical value) for 30V – about 50 percent lower resistance compared to Renesas’ earlier products – and a high-efficiency, small surface mount package (8-pin HVSON), the new products enable high-current control in a smaller package contributing to power savings and miniaturization of the power units used for comparably large scale server storage systems.

Key Features of the New Low On-State Resistance Power MOSFET Products
1) Industry’s lowest on-state resistance
The new μPA2766T1A delivers the industry’s lowest on-state resistance of 0.72mΩ (typical value) for 30V applications in a small 5 mm × 6 mm package and is less than the on-state resistance of previous Renesas products by approximately half. This contributes to improved power efficiency for the system overall by reducing the conduction loss of the ORing FETs for power supply units used in network servers and storage systems, which are the key applications to contribute to the smart society. In addition, this makes it possible to suppress large voltage drops with large currents. It is possible to attain highly precise power supply voltage even with power supply units having wide current fluctuations.
2) 8-pin HVSON package with small mounting area and support for large-current control
The 8-pin HVSON package provides low package resistance because a metal plate is used to connect the FET die within the package to the pins. This, combined with the low on-state resistance of the FET die, allows for large-current control as much as rated 130A (ID (DC)) in spite of the compact 5 mm × 6 mm size of the package. It also helps to reduce equipment size by enabling the use of the minimum number of pa­rallel connections when multiple ORing FETs are connected in parallel to each of the power supply units in order to supply a large current.

Renesas Electronics Europe
www.renesas.eu

Leave a Reply

Your email address will not be published. Required fields are marked *

  • We use your personal data ONLY to respond to your comments/requests.
  • To receive responses that are appropriate to your requests, we may transfer your email address and your name to the author of the article.
  • For more information on our Privacy Policy and Personal Data Processing, please visit the page: Privacy Policy (GDPR) & Cookies.
  • If you have any questions or concerns regarding the way we process your personal data, you can contact our Data Protection Officer at: gdpr@esp2000.ro
  • Subscribe to our magazine newsletter