Next-Generation TrenchFET® Gen IV 30V N-Channel Power MOSFETs feature On-Resistance down to 1.0mΩ at 10V and 1.35mΩ at 4.5V

17 MAY 2012

Vishay Intertechnology, Inc. introduced the first devices in its next-generation TrenchFET® Gen IV family of 30 V n-channel power MOSFETs. Utilizing a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35mΩ at 4.5V and low Miller charge, Qgd, down to 1.8nC in the PowerPAK® SO-8 and 1212-8 packages. The new Vishay Siliconix TrenchFET IV power MOSFETs incorporate technological improvements in silicon design, wafer processing, and device packaging to deliver a number of benefits to designers of today’s power electronics systems. With a reduction in on-resistance times silicon area of over 60 % compared with previous-generation devices, the SiRA00DP is able to demonstrate extremely low RDS(on) values of 1.0mΩ at 10V and an industry-best 1.35mΩ at 4.5V.
TrenchFET Gen IV MOSFETs offer a new structure that utilizes a very high-density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices.

Vishay Intertechnology
www.vishay.com

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