Vishay Intertechnology, Inc. introduced a new dual 20 V p-channel TrenchFET® Gen III power MOSFET with an 8V gate-to-source voltage featuring the lowest on-resistance ever achieved for a dual p-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area.
The new SiA923EDJ will be used for DC/DC converters, as well as for charger and load switches in handheld devices such as smartphones, MP3 players, tablet PCs, and eBooks. The MOSFET’s lower on-resistance translates into lower conduction losses, saving power and prolonging battery life between charges in these devices. The SiA923EDJ offers an ultra-low on-resistance of 54mΩ at 4.5V, 70mΩ at 2.5V, 104mΩ at 1.8V, and 165mΩ at 1.5V. The closest competing p-channel device with an 8 V gate-to-source rating features on-resistance of 60mΩ at 4.5V, 80mΩ at 2.5V, 110 mΩ at 1.8V, and 170mΩ at 1.5V. These values are 10%, 12%, 5%, and 3% higher, respectively, than the SiA923EDJ. The MOSFET’s on-resistance ratings down to 1.5 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry.