Vishay Siliconix Releases New 20-V P-Channel TrenchFET® Gen III Power MOSFET

17 JUNE 2009

Vishay Intertechnology, Inc. (NYSE: VSH) today unveiled a new 20-V p-channel TrenchFET® Gen III power MOSFET with the lowest on-resistance ever achieved in the PowerPAK® 1212-8 type package. With a compact 3.3-mm by 3.3-mm footprint, the device saves space by offering one-third the footprint area of the PowerPAK SO-8 or SO-8 type packages.
The new Si7615DN offers an ultra-low on-resistance of 3.9 milliohms at 10 V, 5.5 milliohms at 4.5 V, and 9.8 milliohms at 2.5 V. The low on-resistance of the TrenchFET Gen III MOSFET translates into lower conduction losses, allowing the device to perform switching tasks with less power than any previous p-channel power MOSFET on the market.
The Si7615DN will be used as the adaptor switch and for load switching applications in notebook computers, netbooks, and industrial/general systems. Adaptor switches (switching between the adaptor/wall power or the battery power) are always on and drawing current. The lower on-resistance of the Si7615DN translates into lower power consumption, saving power and prolonging battery life between charges. The Si7615DN joins Vishay’s recently released 20-V p-channel TrenchFET Gen III Si7137DP in the PowerPAK SO-8 package.
www.vishay.com

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