Texas Instruments (TI) introduced two new device families that help reduce size and weight in motor drive applications. When used together, DRV832x brushless DC (BLDC) gate drivers and CSD88584/99 NexFET™ Power Blocks require as little as 511 mm2, half the board space of competing solutions.
The DRV832x BLDC gate drivers feature a smart gate-drive architecture that eliminates up to 24 components traditionally used to set the gate drive current while enabling designers to easily adjust field-effect transistor (FET) switching to optimize power loss and electromagnetic compliance. The CSD88584Q5DC and CSD88599Q5DC power blocks leverage two FETs in a unique stacked-die configuration, which doubles power density and minimizes the FET resistance and parasitic inductances typically found in side-by-side FET configurations.
An 18-volt compact BLDC motor reference design demonstrates how the DRV8323 gate driver and CSD88584Q5DC power block can drive 11 W/cm3 power and enable engineers to jump-start their designs for smaller, lighter-weight power tools, integrated motor modules, drones and more.
Benefits of using a CSD88584/99 and DRV832x device together
• Maximum power density: The combined solution delivers 700 W of motor power without a heat sink, providing 50 percent higher current than conventional solutions without increasing the footprint.
• High peak current: As demonstrated by the 18-volt BLDC reference design, the smart gate driver and power block are capable of driving a peak current of up to 160 A for more than 1 second.
• Optimal system protection: The combination enables shorter trace lengths and actively prevents unintended FET turn-on, while also providing undervoltage, overcurrent and thermal protection.
• Superior thermal performance: The CSD88584Q5DC and CSD88599Q5DC power blocks come in TI’s DualCool™ thermally enhanced package, which enables designers to apply a heat sink to the top of the device to decrease thermal impedance.
• Clean switching: The power blocks’ switch-node clip helps eliminate parasitic inductance between high- and low-side FETs.
Texas Instruments | www.ti.com